Additive decomposition applied to the semiconductor drift-diffusion model

Brauer, Elizabeth J. and Turowski, Marek and McDonough, James M. Additive decomposition applied to the semiconductor drift-diffusion model. VLSI Design, 8 (1-4). pp. 393-399. ISSN 1563-5171

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Abstract

A new numerical method for semiconductor device simulation is presented. The additive decomposition method has been successfully applied to Burgers' and Navier-Stokes equations governing turbulent fluid flow by decomposing the equations into large-scale and small-scale parts without averaging. The additive decomposition (AD) technique is well suited to problems with a large range of time and/or space scales, for example, thermal-electrical simulation of power semiconductor devices with large physical size. Furthermore, AD adds a level of parallelization for improved computational efficiency. The new numerical technique has been tested on the 1-D drift-diffusion model of a p-i-n diode for reverse and forward biases. Distributions of , n and p have been calculated using the AD method on a coarse large-scale grid and then in parallel small-scale grid sections. The AD results agreed well with the results obtained with a traditional one-grid approach, while potentially reducing memory requirements with the new method.

Item Type:	Article
Keywords:	Computational methods; computer simulation; diffusion; Navier Stokes equations; numerical methods; Semiconductor device models; Semiconductor diodes; Thermoelectricity; Turbulent flow
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Department/Unit:	College of Engineering, Forestry, and Natural Science > Electrical Engineering and Computer Science
Date Deposited:	01 May 2017 20:47
URI:	http://openknowledge.nau.edu/id/eprint/2330

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